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Basic Speed and Power Properties of Digital Floating-gate Circuits Operating in Subthreshold
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Institutionen för informationsteknologi och medier. (Electronics Design Division)
Department of Informatics, University of Oslo. (Electronics division)
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Institutionen för informationsteknologi och medier. (Electronics Design Division, STC)ORCID-id: 0000-0001-9572-3639
2005 (engelsk)Inngår i: Proceedings of IFIP VLSI-SOC 2005: International Conference on Very Large Scale Integration, Edith Cowan Univ , 2005, s. 229-232Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

For digital circuits with ultra-low power consumption,floating-gate circuits have been considered to be a techniquepotentially better than standard static CMOS circuits.By having a DC offset on the floating gates, theeffective threshold voltage of the floating-gate transistoris adjusted and the speed and power performance can bealtered. In this paper the basic performance related propertiessuch as power, delay, power-delay product (PDP),and energy-delay product (EDP) for floating-gate circuitsoperating in subthreshold are investigated. Based on circuitsimulations in a 120nm process technology, it isshown that for the best case, the power can be reducedapproximately by one order of magnitude at the expenseof increased delay, while the PDP is more or less constantin comparison to static CMOS. The EDP can be reducedby two orders of magnitude at the expense of reducednoise margins.

sted, utgiver, år, opplag, sider
Edith Cowan Univ , 2005. s. 229-232
Emneord [en]
low power electronics subthreshold floating-gate
HSV kategori
Identifikatorer
URN: urn:nbn:se:miun:diva-8006OAI: oai:DiVA.org:miun-8006DiVA, id: diva2:133023
Konferanse
IFIP International Conference on Very Large Scale Interaction
Prosjekter
STC - Sensible Things that CommunicateTilgjengelig fra: 2009-01-07 Laget: 2009-01-07 Sist oppdatert: 2020-01-29bibliografisk kontrollert
Inngår i avhandling
1. Performance of Digital Floating-Gate Circuits Operating at Subthreshold Power Supply Voltages
Åpne denne publikasjonen i ny fane eller vindu >>Performance of Digital Floating-Gate Circuits Operating at Subthreshold Power Supply Voltages
2007 (engelsk)Licentiatavhandling, med artikler (Annet vitenskapelig)
Abstract [en]

All who is involved in electronic design knows that one of the critical issues

in today’s electronic is the power consumption. Designers are always looking for

new approaches in order to reduce currents while still retain performance.

Floating-gate (FGMOS) circuits have previously been shown to be a promising

technique to improve speed and still keep the power consumption low when

power supply is reduced below subthreshold voltage for the transistors.

In this thesis, the goal is to determine how good floating-gate circuits can be

compared to conventional static CMOS when the circuits are working in

subthreshold. The most interesting performance parameters are speed and power

consumption and specifically the Energy-Delay Product (EDP) that is a

combination of those two. To get a view over how the performance varies and how

good the FGMOS circuits are at their best case, the circuits have been designed and

simulated for best case performance.

The investigation also includes trade-offs with speed and power

consumption for better performance, how to select floating-gate capacitances, how

a large circuit fan-in will affect performance and also the influence of different

kinds of refresh circuits.

The first simulations of the FGMOS circuits in a 0.13 μm process have

several interesting results. First of all, in the best case it is shown that FGMOS has

potential to achieve up to 260 times in better EDP-performance compared to CMOS

at 150 mV power supply. Continuing with simulations of FGMOS capacitances

shows that minimum floating-gate capacitance can be as small as 400 fF and more

realistic performance shows that EDP is 37 times better for FGMOS (with parasitic

capacitances included). Other aspects of FGMOS design have been to look at how

refresh circuits will affect performance (semi-floating-gate circuits) and how a

larger fan-in will change noise margin and EDP. It turns out that refresh circuits

with the same transistor size does not give a noticeable change in performance

while an increase of 8 times in size will give between 5 and 10 times wors EDP.

When it comes to fan-in the simulations shows that a maximum fan-in of 5 is

possible at 250 mV supply and it decrease to 3 when supply voltage is reduced to

150 mV.

Finally, it should be kept in mind that tuning the performance of FGMOS

circuits with trade-offs and by changing the floating-gate voltages to achieve

results like the ones stated above will also always affect the noise margins, NM, of

the circuits. As a consequence of this, the NM will sometimes be so close to 1 that a

fabricated circuit with that NM may not be as functional as simulations suggests.

The probability to design functional FGMOS circuits in subthreshold does not

seem to be a problem though.

sted, utgiver, år, opplag, sider
Sundsvall: Mittuniversitetet, 2007. s. 44
Serie
Mid Sweden University licentiate thesis, ISSN 1652-8948 ; 18
HSV kategori
Identifikatorer
urn:nbn:se:miun:diva-9333 (URN)91-85317-35-7 (ISBN)
Presentation
(engelsk)
Opponent
Veileder
Tilgjengelig fra: 2009-07-10 Laget: 2009-07-10 Sist oppdatert: 2011-02-06bibliografisk kontrollert

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