miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl-2
Uppsala universitet, Institutionen för materialvetenskap.ORCID iD: 0000-0003-2352-9006
Uppsala universitet, Institutionen för materialvetenskap.
Uppsala universitet, Institutionen för materialvetenskap.
Uppsala universitet, Institutionen för materialvetenskap.
Show others and affiliations
1997 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 15, no 3, p. 686-691Article in journal (Refereed) Published
Abstract [en]

The angular dependence of the etch rate in reactive ion etching (RIE) and inductively coupled plasma (ICP) systems for polysilicon etching with SF6" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">SF6SF6 and Cl2" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">Cl2Cl2 is determined using a recently developed direct measurement method. The latter utilizes specially patterned silicon groove structures consisting of 7–10 μm wide planar surfaces which form various angles with respect to the wafer normal. The structures are produced by highly anisotropic wet chemical etchingof Si through a gratinglike mask pattern aligned along specific crystallographic orientations of the wafer which results in the development of planar surfaces of various orientations. These surfaces are then coated with the materials to be studied—polysilicon in this case. The deposited polysilicon is then etched under a variety of conditions in a RIE and an ICP reactor and the etch rates determined by interferometric measurements. Since only standard Si wafers are used and the size of the pattern is only a few μm the method is fully IC production compatible, which means that one can measure the angular dependence of the etch rate directly in production etching systems. The results for RIE of polysilicon with SF6" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">SF6SF6 show that the process becomes more isotropic with increasing pressure. The angular dependence of the RIE and ICP polysilicon etchrates in Cl2" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">Cl2Cl2 atmosphere were found to vary with the substrate bias. Specifically low substrate bias resulted in an under cosine distribution whereas bias higher than 240–250 V led to over cosine distributions.

Place, publisher, year, edition, pages
1997. Vol. 15, no 3, p. 686-691
Keywords [en]
ION; SURFACE; SILICON; MASS; MECHANISMS
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-31582DOI: 10.1116/1.580802OAI: oai:DiVA.org:miun-31582DiVA, id: diva2:1140981
Note

Addresses: UNIV UPPSALA, DEPT MAT SCI, S-75121 UPPSALA, SWEDEN.

Available from: 2007-03-02 Created: 2017-09-13 Last updated: 2017-09-13Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records BETA

Hedlund, Christer

Search in DiVA

By author/editor
Hedlund, Christer
In the same journal
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 188 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf