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Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
Uppsala universitet, Institutionen för materialvetenskap.ORCID iD: 0000-0003-2352-9006
Uppsala universitet, Institutionen för materialvetenskap.
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1998 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. A16, no 6, p. 3281-Article in journal (Refereed) Published
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1998. Vol. A16, no 6, p. 3281-
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:miun:diva-31606DOI: 10.1116/1.581534OAI: oai:DiVA.org:miun-31606DiVA, id: diva2:1140937
Available from: 2007-03-01 Created: 2017-09-13 Last updated: 2017-09-13Bibliographically approved

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Hedlund, Christer

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