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Low frequency noise in strained Si heterojunction bipolar transistors
School of Electrical, Electronic and Computer Engineering, Newcastle University, NE1 7RU Newcastle upon Tyne, United Kingdom.
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Institutionen för informationsteknologi och medier.
School of Electrical, Electronic and Computer Engineering, Newcastle University, NE1 7RU Newcastle upon Tyne, United Kingdom.
School of Electrical, Electronic and Computer Engineering, Newcastle University, NE1 7RU Newcastle upon Tyne, United Kingdom.
2011 (Engelska)Ingår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, nr 12, s. 4196-4203Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction transistors (BJTs), processed with strained Si devices, were also measured as a reference. It is found that a lower noise level is obtained in sSi HBTs for a given collector current, which is important for circuit applications, compared with either SiGe HBTs or Si BJTs. However, sSi HBTs exhibit greater low frequency noise compared with other devices at fixed base current. This is due to the presence of defects that are caused by the integration of the strain-relaxed buffer in the fabrication of sSi HBTs. The relationship between low frequency noise and defects is supported by material characterization. © 2011 IEEE.

Ort, förlag, år, upplaga, sidor
2011. Vol. 58, nr 12, s. 4196-4203
Nyckelord [en]
1/f noise, Defect, low frequency noise, strain-relaxed buffer (SRB), strained Si heterojunction bipolar transistors (HBTs), strained silicon
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URN: urn:nbn:se:miun:diva-15300DOI: 10.1109/TED.2011.2167753Scopus ID: 2-s2.0-82155192212OAI: oai:DiVA.org:miun-15300DiVA, id: diva2:466378
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Art. No.: 6036166Tillgänglig från: 2011-12-15 Skapad: 2011-12-15 Senast uppdaterad: 2017-12-08Bibliografiskt granskad

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