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Investigation of charge collection in a CdTe-Timepix detector
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Avdelningen för elektronikkonstruktion.ORCID-id: 0000-0002-5619-409X
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Avdelningen för elektronikkonstruktion.ORCID-id: 0000-0002-8325-5177
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Avdelningen för elektronikkonstruktion.
Department of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom .
Vise andre og tillknytning
2013 (engelsk)Inngår i: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 8, nr May, s. Art. no. C05003-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Energy calibration of CdTe detectors is usually done using known reference sources disregarding the exact amount of charge that is collected in the pixels. However, to compare detector and detector model the quantity of charge collected is needed. We characterize the charge collection in a CdTe detector comparing test pulses, measured data and an improved TCAD simulation model [1]. The 1 mm thick detector is bump-bonded to a TIMEPIX chip and operating in Time-over-Threshold (ToT) mode. The resistivity in the simulation was adjusted to match the detector properties setting a deep intrinsic donor level [2]. This way it is possible to adjust properties like trap concentration, electron/hole lifetime and mobility in the simulation characterizing the detector close to measured data cite [3].

sted, utgiver, år, opplag, sider
2013. Vol. 8, nr May, s. Art. no. C05003-
Emneord [en]
Charge induction; solid state detectors; x-ray detectors; models and simulations
HSV kategori
Identifikatorer
URN: urn:nbn:se:miun:diva-18946DOI: 10.1088/1748-0221/8/05/C05003ISI: 000320726000003Scopus ID: 2-s2.0-84878342633Lokal ID: STCOAI: oai:DiVA.org:miun-18946DiVA, id: diva2:621728
Konferanse
14th International Workshop on Radiation Imaging Detectors (iWoRID 2012); 20-25 June 2012; Figueira da Foz, Portugal.
Tilgjengelig fra: 2013-05-16 Laget: 2013-05-16 Sist oppdatert: 2017-12-06bibliografisk kontrollert
Inngår i avhandling
1. Monte Carlo and Charge Transport Simulation of Pixel Detector Systems
Åpne denne publikasjonen i ny fane eller vindu >>Monte Carlo and Charge Transport Simulation of Pixel Detector Systems
2015 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

This thesis is about simulation of semiconductor X-ray and particledetectors. The simulation of a novel coating for solid state neutrondetectors is discussed as well as the implementation of a simulationframework for hybrid pixel detectors.Today’s most common thermal neutron detectors are proportionalcounters, that use 3He gas in large tubes or multi wire arrays. Globalnuclear disarmament and the increase in use for homeland securityapplications has created a shortage of the gas which poses a problemfor neutron spallation sources that require higher resolution and largersensors. In this thesis a novel material and clean room compatible pro-cess for neutron conversion are discussed. Simulations and fabricationhave been executed and analysed in measurements. It has been proventhat such a device can be fabricated and detect thermal neutrons.Spectral imaging hybrid pixel detectors like the Medipix chipare the most advanced imaging systems currently available. Thesechips are highly sophisticated with several hundreds of transistors perpixel to enable features like multiple thresholds for noise free photoncounting measurements, spectral imaging as well as time of arrivalmeasurements. To analyse and understand the behaviour of differentsensor materials bonded to the chip and to improve development offuture generations of the chip simulations are necessary. Generally, allparts of the detector system are simulated independently. However, itis favourable to have a simulation framework that is able to combineMonte Carlo particle transport, charge transport in the sensor as wellas analogue and digital response of the pixel read-out electronics. Thisthesis aims to develop such a system that has been developed withGeant4 and analytical semiconductor and electronics models. Further-more, it has been verified with data from measurements with severalMedipix and Timepix sensors as well as TCAD simulations.Results show that such a framework is feasible even for imagingsimulations. It shows great promise to be able to be extended withfuture pixel detector designs and semiconductor materials as well asneutron converters to aim for next generation imaging devices.

sted, utgiver, år, opplag, sider
Sundsvall: Mid Sweden University, 2015. s. 95
Serie
Mid Sweden University doctoral thesis, ISSN 1652-893X ; 215
Emneord
Monte Carlo Simulation, TCAD, pixel detectors, Medipix, Timepix, Finite Element Simulation
HSV kategori
Identifikatorer
urn:nbn:se:miun:diva-24763 (URN)STC (Lokal ID)978-91-88025-06-7 (ISBN)STC (Arkivnummer)STC (OAI)
Disputas
2015-04-08, M102, Mittuniversitetet, Holmgatan 10, Sundsvall, 10:00 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2015-03-31 Laget: 2015-03-31 Sist oppdatert: 2016-12-23bibliografisk kontrollert

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