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Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si
Vise andre og tillknytning
2007 (engelsk)Inngår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 253, nr 11, s. 4836-4842Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Carbon ions at 40 keV were implanted into (100) high-purity p-type silicon wafers at 400 oC to a fluence of 6.5×1017 ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 oC. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The 1 results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the poly-crystalline SiC.

sted, utgiver, år, opplag, sider
2007. Vol. 253, nr 11, s. 4836-4842
Emneord [en]
Ion beam synthesis (IBS), Silicon, Silicon carbide (SiC), Infrared spectroscopy
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Identifikatorer
URN: urn:nbn:se:miun:diva-3943DOI: 10.1016/j.apsusc.2006.10.055ISI: 000245500200004Scopus ID: 2-s2.0-33847316578Lokal ID: 4338OAI: oai:DiVA.org:miun-3943DiVA, id: diva2:28975
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VR-Materials Science

Tilgjengelig fra: 2008-09-30 Laget: 2008-09-30 Sist oppdatert: 2017-10-31bibliografisk kontrollert

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