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Simulation of anisotropic Breakdown in 4H-SiC Diodes
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Institutionen för informationsteknologi och medier.
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Institutionen för informationsteknologi och medier.ORCID-id: 0000-0002-3790-0729
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Institutionen för informationsteknologi och medier.
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2000 (engelsk)Inngår i: IEEE Workshop on Computers in Power Electronics: COMPEL 2000, IEEE , 2000, s. 118-120Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

The breakdown characteristics of two-dimensional 4H-SiC diode structures have been studied using an anisotropic drift-diffusion model. The degree of anisotropy was estimated from recent full band Monte Carlo simulations. Identical diode structures have previously been used in the literature to measure the hole impact ionization coefficients of 4H-SiC. The reported measurements from different research groups show large differences in the impact ionization coefficients. Our numerical simulations show that the differences in these measurements can be explained by the difference in device geometry used by the research teams if one considers an anisotropic impact ionization process. This indicates that it is very important to consider anisotropic impact ionization in design and characterization of 4H-SiC power devices.

sted, utgiver, år, opplag, sider
IEEE , 2000. s. 118-120
Emneord [en]
SiC breakdown
HSV kategori
Identifikatorer
URN: urn:nbn:se:miun:diva-1830ISI: 000166855500020Scopus ID: 2-s2.0-0034462638Lokal ID: 544OAI: oai:DiVA.org:miun-1830DiVA, id: diva2:26862
Konferanse
7th Workshop on Computers in Power Electronics; Blacksburg, VA, USA; ; 16 July 2000 through 18 July 2000
Tilgjengelig fra: 2008-12-11 Laget: 2008-12-11 Sist oppdatert: 2016-10-11bibliografisk kontrollert

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Bertilsson, KentNilsson, Hans-ErikPetersson, Sture

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