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Etch rates of crystallographic planes in Z-cut quartz - experiments and simulation
Uppsala universitet, Institutionen för materialvetenskap.
Uppsala universitet, Institutionen för materialvetenskap.ORCID-id: 0000-0003-2352-9006
Uppsala universitet, Institutionen för materialvetenskap.
Uppsala universitet, Institutionen för materialvetenskap.
1998 (engelsk)Inngår i: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 8, nr 1, s. 1-6Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The anisotropic etching behaviour of monocrystalline quartz is studied both experimentally and with computer simulations. The etch rate minima were identified as the crystal planes mrs and . Various shapes and initial structures, both concave and convex, have been produced by etching quartz wafers in an HF:F solution. These have been subsequently analysed with a scanning electron microscope (SEM). Etch rates of both slow- and fast-etching crystal planes have been measured. The data thus obtained were fed into topography evolution software and a number of experimental profiles were compared with the simulated ones. To verify the work, a 3.5 m thick membrane was manufactured in a two-step double-sided etching process. This illustrates the usefulness of the data obtained, as well as the power of the simulations.

sted, utgiver, år, opplag, sider
1998. Vol. 8, nr 1, s. 1-6
Emneord [en]
SILICON; GROWTH
HSV kategori
Identifikatorer
URN: urn:nbn:se:miun:diva-31602DOI: 10.1088/0960-1317/8/1/001OAI: oai:DiVA.org:miun-31602DiVA, id: diva2:1140940
Merknad

Addresses: Rangsten P, Univ Uppsala, Angstrom Lab, Dept Mat Sci, Box 534, S-75121 Uppsala, Sweden. Univ Uppsala, Angstrom Lab, Dept Mat Sci, S-75121 Uppsala, Sweden.

Tilgjengelig fra: 2007-03-01 Laget: 2017-09-13 Sist oppdatert: 2017-09-13bibliografisk kontrollert

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