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Petersson, Sture
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Publications (10 of 49) Show all publications
Kok, A., Kohout, Z., Hansen, T.-E. -., Petersson, S., Pospisil, S., Rokne, J., . . . Vykydal, Z. (2014). Silicon sensors with pyramidal structures for neutron imaging. Paper presented at 15th International Workshop on Radiation Imaging Detectors, JUN 23-27, 2013, Paris, FRANCE. Journal of Instrumentation, 9, Art. no. C04011
Open this publication in new window or tab >>Silicon sensors with pyramidal structures for neutron imaging
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2014 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 9, p. Art. no. C04011-Article in journal (Refereed) Published
Abstract [en]

Neutron detection is a valuable tool in nuclear science research, homeland security, quality assurance in nuclear plants and medical applications. Recent developments and near future instrumentations in neutron imaging have a need for sensors with high spatial resolution, dynamic range, sensitivity and background discrimination. Silicon based neutron detectors can potentially fulfil these requirements. In this work, pad and pixel detectors with pyramidal micro-structures have been successfully fabricated that should have an improved detection efficiency when compared to conventional planar devices. Titanium di-boride (TiB2) and lithium fluoride (LiF) were deposited as the neutron converters. Excellent electrical performances were measured on both simple pad and pixel detectors. A selection of pad detectors was examined by alpha spectroscopy. Measurement with thermal neutrons from a 241Am-Be source shows an improvement in relative efficiency of up to 38% when compared to conventional planar devices.

Keywords
Neutron radiography, X-ray detectors, Si microstrip and pad detectors, Solid state detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-22595 (URN)10.1088/1748-0221/9/04/C04011 (DOI)000336123800011 ()2-s2.0-84940224810 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
Conference
15th International Workshop on Radiation Imaging Detectors, JUN 23-27, 2013, Paris, FRANCE
Available from: 2014-08-19 Created: 2014-08-19 Last updated: 2017-12-05Bibliographically approved
Slavicek, T., Kralik, M., Krapohl, D., Petersson, S., Pospisil, S. & Thungström, G. (2012). A thermal neutron detector based on planar silicon sensor with TiB 2 coating. Journal of Instrumentation, 7(1), Art. no. C01053
Open this publication in new window or tab >>A thermal neutron detector based on planar silicon sensor with TiB 2 coating
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2012 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 7, no 1, p. Art. no. C01053-Article in journal (Refereed) Published
Abstract [en]

Neutron radiation as a non-ionizing radiation is particularly difficult to detect; therefore a conversion material is required. The conversion material converts neutrons into secondary charged particles in order for them to be detected in a silicon detector. The use of titanium diboride (TiB 2) as the conversion material deposited by an electron beam-physical vapour deposition (EB-PVD) as a part of a front-side contact of a planar silicon detector is presented. The effect of different front-side contact material compositions is discussed. The detectors behaviour was examined using alpha particles and thermal neutrons from an 241Am-Be source. Simultaneously, a Geant4 simulation was so as executed to evaluate the conversion layer functionality and to discover the conversion material thickness for the best neutron detection efficiency. © 2012 IOP Publishing Ltd and SISSA.

Keywords
Neutron detectors (cold, thermal, fast neutrons); Si microstrip and pad detectors; Solid state detectors
National Category
Other Physics Topics
Identifiers
urn:nbn:se:miun:diva-16746 (URN)10.1088/1748-0221/7/01/C01053 (DOI)000303806200053 ()2-s2.0-84856934655 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
Available from: 2012-08-20 Created: 2012-08-17 Last updated: 2018-02-26Bibliographically approved
Krapohl, D., Nilsson, H.-E., Petersson, S., Pospisil, S., Slavicek, T. & Thungström, G. (2012). Simulation of a silicon neutron detector coated with TiB 2 absorber. Journal of Instrumentation, 7(1), Art. no. C01096
Open this publication in new window or tab >>Simulation of a silicon neutron detector coated with TiB 2 absorber
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2012 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 7, no 1, p. Art. no. C01096-Article in journal (Refereed) Published
Abstract [en]

Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process. © 2012 IOP Publishing Ltd and SISSA.

Keywords
Detector modeling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc); Neutron detectors (cold, thermal, fast neutrons); Solid state detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-16748 (URN)10.1088/1748-0221/7/01/C01096 (DOI)000303806200096 ()2-s2.0-84856927467 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
Available from: 2012-08-17 Created: 2012-08-17 Last updated: 2018-02-26Bibliographically approved
Fröjdh, A., Thungstrom, G., Frojdh, C. & Petersson, S. (2011). An optimized system for measurement of radon levels in buildings by spectroscopic measurement of radon progeny. Journal of Instrumentation, 6(12), art. no. C12018
Open this publication in new window or tab >>An optimized system for measurement of radon levels in buildings by spectroscopic measurement of radon progeny
2011 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 6, no 12, p. art. no. C12018-Article in journal (Refereed) Published
Abstract [en]

Radon gas, Rn-222, is a problem in many buildings. The radon gas is not harmful in itself, but the decay chain contains charged elements such as Po-218, and Po-214 ions which have a tendency to stick to the lungs when inhaled. Alpha particles from the decay of these ions cause damages to the lungs and increase the risk of lung cancer. The recent reduction in the limits for radon levels in buildings call for new simple and efficient measurement tools [1]. The system has been optimized through modifications of the detector size, changes to the filters and the design of the chamber. These changes increase the electric field in the chamber and the detection efficiency.

Keywords
Particle identification methods, Solid state detectors, Si microstrip and pad detectors, Ion identification systems
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-16205 (URN)10.1088/1748-0221/6/12/C12018 (DOI)000299536600018 ()2-s2.0-84855418271 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
Available from: 2012-05-11 Created: 2012-05-11 Last updated: 2018-02-26Bibliographically approved
Fröjdh, A., Thungström, G., Fröjdh, C. & Petersson, S. (2010). An alpha particle detector for measuring radon levels. In: Proceedings of Nuclear Science Symposium Conference Record (NSS/MIC), 2010: . Paper presented at 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010; Knoxville, TN; United States; 30 October 2010 through 6 November 2010; (pp. 460-461). IEEE conference proceedings
Open this publication in new window or tab >>An alpha particle detector for measuring radon levels
2010 (English)In: Proceedings of Nuclear Science Symposium Conference Record (NSS/MIC), 2010, IEEE conference proceedings, 2010, p. 460-461Conference paper, Published paper (Refereed)
Abstract [en]

An alpha particle detector for measuring radon levels through measurement of radon progeny concentration has been developed. The detector is a silicon diode optimized for these measurements. Different alternating and non-alternating guard ring structures and different doping profiles have been investigated.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2010
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-15802 (URN)10.1109/NSSMIC.2010.5873802 (DOI)000306402900097 ()2-s2.0-79960329185 (Scopus ID)978-1-4244-9106-3 (ISBN)
Conference
2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010; Knoxville, TN; United States; 30 October 2010 through 6 November 2010;
Available from: 2012-01-31 Created: 2012-01-31 Last updated: 2018-02-26Bibliographically approved
Fröjdh, A., Thungström, G., Fröjdh, C. & Petersson, S. (2010). Measurement of radon levels in buildings by spectroscopic measurement of radon progeny. In: Proceedings of Nuclear Science Symposium Conference Record (NSS/MIC), 2010: . Paper presented at 2010 IEEE Nuclear Science Symposium and Medical Imaging Conference (2010 NSS/MIC) (pp. 1229-1231). IEEE conference proceedings
Open this publication in new window or tab >>Measurement of radon levels in buildings by spectroscopic measurement of radon progeny
2010 (English)In: Proceedings of Nuclear Science Symposium Conference Record (NSS/MIC), 2010, IEEE conference proceedings, 2010, p. 1229-1231Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE conference proceedings, 2010
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-15801 (URN)10.1109/NSSMIC.2010.5873963 (DOI)000306402901081 ()2-s2.0-79960313217 (Scopus ID)978-1-4244-9106-3 (ISBN)
Conference
2010 IEEE Nuclear Science Symposium and Medical Imaging Conference (2010 NSS/MIC)
Available from: 2012-01-31 Created: 2012-01-31 Last updated: 2018-02-26Bibliographically approved
Uher, J., Fröjdh, C., Jakubek, J., Kenney, C., Kohout, Z., Linhart, V., . . . Thungström, G. (2007). Characterization of 3D thermal neutron semiconductor detectors. Paper presented at 8th International Workshop on Radiation Imaging Detectors, Jul 02-06, 2006, pisa, Italy. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 576(1), 32-37
Open this publication in new window or tab >>Characterization of 3D thermal neutron semiconductor detectors
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2007 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 576, no 1, p. 32-37Article in journal (Refereed) Published
Abstract [en]

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as (LiF)-Li-6. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with (LiF)-Li-6 and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. Charge collection efficiencies in silicon columns from 10 to 800 mu m wide and 80-200 mu m high were measured with alpha particles.

The neutron detection efficiency of a full 3D structure was simulated. The results indicate an increase in detection efficiency by a factor of 6 in comparison with a standard planar neutron detector.

Keywords
3D detectors, Neutron detectors, Neutron imaging, Pixel detectors, Radiography
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-3910 (URN)10.1016/j.nima.2007.01.115 (DOI)000247330000009 ()2-s2.0-34248208179 (Scopus ID)4278 (Local ID)4278 (Archive number)4278 (OAI)
Conference
8th International Workshop on Radiation Imaging Detectors, Jul 02-06, 2006, pisa, Italy
Projects
STC - Sensible Things that Communicate
Note

8th International Workshop on Radiation Imaging Detectors, Jul 02-06, 2006, Pisa, Italy

Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2017-12-12Bibliographically approved
Uher, J., Fröjdh, C., Jakubek, J., Kenney, C., Kohout, Z., Linhart, V., . . . Thungström, G. (2007). Highly sensitive silicon detectors of thermal neutrons. In: Nuclear Science Symposium Conference Record, 2006. IEEE. Vol 3.: . Paper presented at 2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD; San Diego, CA; United States; 29 October 2006 through 4 November 2006; Category number06CH37832; Code 70690 (pp. 1346-1348). IEEE conference proceedings, 3
Open this publication in new window or tab >>Highly sensitive silicon detectors of thermal neutrons
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2007 (English)In: Nuclear Science Symposium Conference Record, 2006. IEEE. Vol 3., IEEE conference proceedings, 2007, Vol. 3, p. 1346-1348Conference paper, Published paper (Refereed)
Abstract [en]

Planar semiconductor diodes supplemented with a layer of an appropriate neutron converter such as 6LiF can be used for thermal neutron counting or imaging. Neutrons interacting in the converter generate alphas and tritons which enter the semiconductor and are detected there. However, simple planar devices suffer from limited detection efficiency which cannot reach more than about 5%. The limit in detection efficiency can be overcome by etching a 3D microstructure of trenches, pores or columns in the detector and filling it with the neutron converter. The overall neutron detection efficiency of such structure with pores was simulated. The results indicate an increase in the detection efficiency by factor of 6 in comparison with a standard planar neutron detector. Samples with different silicon column sizes were fabricated to study the electrical properties of 3D structures. The charge collection efficiency in silicon columns from 10 μm to 800 μm wide and 80 μm high was measured. Single pad detectors with pores were also fabricated and tested for thermal neutron detection. The samples have square pores of 20 μm wide, ~60 μm deep. The pore pitch is 70 μm. 6LiF was used as the neutron converter in all cases. Pulse height spectra of the filled samples irradiated by thermal neutrons were measured. The measurement proved functionality of such detectors and its usability for thermal neutron detection.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2007
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-8071 (URN)10.1109/NSSMIC.2006.354152 (DOI)2-s2.0-38649087398 (Scopus ID)1-4244-0560-2 (ISBN)9781424405619 (ISBN)
Conference
2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD; San Diego, CA; United States; 29 October 2006 through 4 November 2006; Category number06CH37832; Code 70690
Available from: 2009-01-07 Created: 2009-01-07 Last updated: 2017-10-31Bibliographically approved
Uher, J., Fröjdh, C., Holy, T., Jakubek, J., Pettersson, S., Pospsisil, S. & Thungström, G. (2007). Silicon detectors for neutron imaging. In: NUCLEAR PHYSICS METHODS AND ACCELERATORS IN BIOLOGY AND MEDICINE: Fourth International Summer School on Nuclear Physics Methods and Accelerators in Biology and Medicine.: . Paper presented at 4th International Summer School on Nuclear Physics Methods and Accelerators in Biology and Medicine; Prague; Czech Republic; 8 July 2007 through 19 July 2007 (pp. 101-104). American Institute of Physics (AIP), 958(1)
Open this publication in new window or tab >>Silicon detectors for neutron imaging
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2007 (English)In: NUCLEAR PHYSICS METHODS AND ACCELERATORS IN BIOLOGY AND MEDICINE: Fourth International Summer School on Nuclear Physics Methods and Accelerators in Biology and Medicine., American Institute of Physics (AIP), 2007, Vol. 958, no 1, p. 101-104Conference paper, Published paper (Refereed)
Abstract [en]

Semiconductor silicon detectors are used in many applications for detection and imaging of ionizing radiation. Detection of neutrons is also possible with these devices. However, the silicon detectors must be adapted for the thermal neutron detection and imaging. The devices must be supplemented with a material which ``converts'' neutrons into a radiation detectable directly in the semiconductor detector. The principle of the thermal neutron detection with semiconductor silicon detectors is explained. Advantages of such detectors are shown as well as their limitations. The way of the detector improvement using 3D detector technologies is described. The 3D detector properties were simulated; real 3D structures were fabricated and successfully tested with a beam of thermal neutrons, finally. The functionality of these devices was proved.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2007
Series
AIP Conference Proceedings ; 958
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-8061 (URN)10.1063/1.2825756 (DOI)2-s2.0-71749087694 (Scopus ID)978-073540472-4 (ISBN)
Conference
4th International Summer School on Nuclear Physics Methods and Accelerators in Biology and Medicine; Prague; Czech Republic; 8 July 2007 through 19 July 2007
Available from: 2009-01-07 Created: 2009-01-07 Last updated: 2016-09-26Bibliographically approved
Thungström, G., Westerberg, L., Spohr, R. & Petersson, S. (2005). Fabrication and Characterization of thin delta E-Detectors for Spectroscopic Application. Paper presented at 6th International Workshop on Radiation Imaging Detectors, Jul 25-29, 2004, Glasgow, Scotland. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 546(1-2), 312-318
Open this publication in new window or tab >>Fabrication and Characterization of thin delta E-Detectors for Spectroscopic Application
2005 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 546, no 1-2, p. 312-318Article in journal (Refereed) Published
Abstract [en]

Ultra thin delta E-detectors for spectroscopic applications have been fabricated and characterized down to a thickness of 4.5 μm. A common one-side mask aligner was in use to fabricate the detectors. The detectors display low leakage current and the resulting capacitance is close to the detector window capacitance below a threshold voltage. The detector telescope should be slightly tilted to reduce the probability for channeling. However, even better control of the thickness uniformity is needed to improve the resolution in the E-E detector telescope

Keywords
Thin silicon detector, delta E-detector, energy straggling, ion channeling
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-2673 (URN)10.1016/j.nima.2005.03.053 (DOI)000230288200058 ()2077 (Local ID)2077 (Archive number)2077 (OAI)
Conference
6th International Workshop on Radiation Imaging Detectors, Jul 25-29, 2004, Glasgow, Scotland
Projects
STC - Sensible Things that Communicate
Note
6th International Workshop on Radiation Imaging Detectors, Jul 25-29, 2004, Glasgow, ScotlandAvailable from: 2008-12-16 Created: 2008-12-16 Last updated: 2017-12-12Bibliographically approved

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