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2014 (English)In: Journal of Instrumentation, E-ISSN 1748-0221, Vol. 9, no 7, p. Art. no. C07013-Article in journal (Refereed) Published
Abstract [en]
Silicon detectors made on p-substrates are expected to have a better radiation hardness as compared todetectors made on n-substrates. However, the fixed positive oxide charges induce an inversion layer ofelectrons in the substrate, which connects the pixels. The common means of solving this problem isby using a p-spray, individual p-stops or a combination of the two. Here, we investigate the use offield plates to suppress the fixed positive charges and to prevent the formation of an inversion layer.The fabricated detector shows a high breakdown voltage and low interpixel leakage current for astructure using biased field plates with a width of 20 μm. By using a spice model for simulation of thepreamplifier, a cross talk of about 1.6 % is achieved with this detector structure. The cross talk iscaused by capacitive and resistive coupling between the pixels
Keywords
Electronic detector readout concepts (solid-state), Radiation-hard detectors, Solid state detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-22224 (URN)10.1088/1748-0221/9/07/C07013 (DOI)000340050700013 ()2-s2.0-84905165594 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
2014-06-192014-06-192024-07-04Bibliographically approved